K.N. Tu
Materials Science and Engineering: A
Direct high-resolution photoetching of various resists and polymers has been demonstrated using an ArF excimer laser at 193 nm. Features as small as 0.3 μm have been produced in 1 μm thick films with no subsequent wet processing steps necessary. © 1984 Springer-Verlag.
K.N. Tu
Materials Science and Engineering: A
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
R.W. Gammon, E. Courtens, et al.
Physical Review B