Zachary R. Robinson, Parul Tyagi, et al.
Physical Review B - CMMP
We have determined the growth mode of graphene on SiC(0001) and SiC(0001̄) using ultrathin, isotopically labeled SiC13 "marker layers" grown epitaxially on the SiC12 surfaces. Few-layer graphene overlayers were formed via thermal decomposition at elevated temperature. For both surface terminations (Si face and C face), we find that the C13 is located mainly in the outermost graphene layers, indicating that, during decomposition, new graphene layers form underneath existing ones. © 2011 American Physical Society.