M. Probst, R. Haight
Applied Physics Letters
Paper
Direct Observation of Adsorbate-Induced Band-Gap States on GaAs(110)
Abstract
Normally unoccupied adsorbate-induced states within the GaAs band gap were studied by measurement of ultraviolet-photoemission spectra from pulsed-laser-excited surfaces. Strikingly similar discrete structures within the gap were observed for submonolayer coverages of both chemisorbed oxygen and gold. The implications of these results for the understanding of Fermi-level pinning at interfaces are discussed. © 1986 The American Physical Society.
Related
A.M. Tyryshkin, S.A. Lyon, et al.
Physica E: Low-Dimensional Systems and Nanostructures
R. Haight, P. Longo, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
H.S. Karlsson, K. Read, et al.
Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films