S. Guha, R. Haight, et al.
Journal of Applied Physics
Normally unoccupied adsorbate-induced states within the GaAs band gap were studied by measurement of ultraviolet-photoemission spectra from pulsed-laser-excited surfaces. Strikingly similar discrete structures within the gap were observed for submonolayer coverages of both chemisorbed oxygen and gold. The implications of these results for the understanding of Fermi-level pinning at interfaces are discussed. © 1986 The American Physical Society.
S. Guha, R. Haight, et al.
Journal of Applied Physics
J.E. Ortega, F.J. Himpsel, et al.
Physical Review B
X. Wang, X. Shen, et al.
Physical Review B - CMMP
K. Read, H.S. Karlsson, et al.
Journal of Applied Physics