R.C. White, R. Haight, et al.
Applied Physics Letters
Normally unoccupied adsorbate-induced states within the GaAs band gap were studied by measurement of ultraviolet-photoemission spectra from pulsed-laser-excited surfaces. Strikingly similar discrete structures within the gap were observed for submonolayer coverages of both chemisorbed oxygen and gold. The implications of these results for the understanding of Fermi-level pinning at interfaces are discussed. © 1986 The American Physical Society.
R.C. White, R. Haight, et al.
Applied Physics Letters
R. Haight, Dennis Hayden, et al.
BACUS Symposium on Photomask Technology and Management 1998
R. Haight, D.R. Peale
Review of Scientific Instruments
D. Lim, R. Haight
Journal of the Korean Physical Society