Soft x-ray diffraction of striated muscle
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
We review the use of dislocation modeling as a practical tool in the development of semiconducting devices. Areas of application include calculation of single dislocation behavior in transistors and memory cells, large-scale simulations of relaxation in SiGe/Si and SiGe/SOI layer systems, and investigation of dislocation nucleation at stress concentrators. Current capabilities and case studies for each are reviewed, and areas where further progress is needed are identified. © 2005 Elsevier B.V. All rights reserved.
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Peter J. Price
Surface Science