S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
We review the use of dislocation modeling as a practical tool in the development of semiconducting devices. Areas of application include calculation of single dislocation behavior in transistors and memory cells, large-scale simulations of relaxation in SiGe/Si and SiGe/SOI layer systems, and investigation of dislocation nucleation at stress concentrators. Current capabilities and case studies for each are reviewed, and areas where further progress is needed are identified. © 2005 Elsevier B.V. All rights reserved.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Ming L. Yu
Physical Review B
Revanth Kodoru, Atanu Saha, et al.
arXiv
K.N. Tu
Materials Science and Engineering: A