R.S. Title, M.W. Shafer
Physical Review B
Experiments designed to determine the damage distribution produced by energetic heavy ions in Si are described. For low ion doses, the location of the damage peak was determined by changes, which were produced by ion damage, in the electrical properties of thin uniformly doped Si layers as a function of depth.
R.S. Title, M.W. Shafer
Physical Review B
B.L. Crowder, R.S. Title, et al.
Applied Physics Letters
R.S. Title
Physics Letters
Albert J. Blodgett, B.L. Crowder
International Electronic Manufacturing Technology Symposium 1987