T.F. Kuech, E. Veuhoff, et al.
Journal of Crystal Growth
This letter compares diffusion of boron in Si during oxidation both for pure Si and for Si covered with a very thin layer of SiGe alloy. It demonstrates that the thin layer of SiGe suppresses oxidation enhanced diffusion of boron. A mechanism is proposed based on suppression of Si interstitials. This phenomenon is then related to the faster rate of oxidation of bulk SiGe and SiGe-covered Si samples reported previously.
T.F. Kuech, E. Veuhoff, et al.
Journal of Crystal Growth
C.-K. Hu, L. Gignac, et al.
IITC 2002
A. Grill, B.S. Meyerson, et al.
Journal of Materials Research
A. Grill, B.S. Meyerson, et al.
Journal of Applied Physics