I. Adesida, M. Arafa, et al.
Microelectronic Engineering
This letter compares diffusion of boron in Si during oxidation both for pure Si and for Si covered with a very thin layer of SiGe alloy. It demonstrates that the thin layer of SiGe suppresses oxidation enhanced diffusion of boron. A mechanism is proposed based on suppression of Si interstitials. This phenomenon is then related to the faster rate of oxidation of bulk SiGe and SiGe-covered Si samples reported previously.
I. Adesida, M. Arafa, et al.
Microelectronic Engineering
O. Thomas, P. Gas, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
C.-K. Hu, L. Gignac, et al.
IITC 2002
B.S. Meyerson, M.L. Yu
International Conference on Chemical Vapor Deposition 1983