J. Tersoff
Physical Review Letters
The effect of drain voltage scaling on the turn-on behavior of carbon nanotube (CNT) transistors was studied. The decrease in oxide thickness was found to improve the turn-on behavior. Scaling was employed to avoid an exponential increase in off-current with drain voltage, arising due to the schottky barriers modulation at both the source and drain contact.
J. Tersoff
Physical Review Letters
P.C. Kelires, J. Tersoff
Physical Review Letters
S.J. Wind, J. Appenzeller, et al.
NANO 2003
M. Bode, A. Kubetzka, et al.
Journal of Physics Condensed Matter