K.N. Tu, K.Y. Ahn, et al.
Applied Physics Letters
Resistance changes associated with precipitation in AlSingle Bond signCu thin films were monitored during power annealing at current densities up to 4×106 A/cm2 and temperatures of ∼178 and 200°C. The rate of change of resistance decreased as the current increased. It is argued that this decrease is due to the current inhibiting the precipitation of θ Al2Cu. © 1972 The American Institute of Physics.
K.N. Tu, K.Y. Ahn, et al.
Applied Physics Letters
S.R. Herd, P. Chaudhari
physica status solidi (a)
K.Y. Ahn, T.H. Distefano, et al.
CLEO 1982
P.J. Grundy, S.R. Herd
physica status solidi (a)