Effect of interfacial hydrogen in CoSi₂/Si(100) Schottky-barrier contacts

Abstract

We have studied the effect of hydrogen in the CoSi2/Si(100) interface on the Schottky barrier height of CoSi2 on n- and p-type Si(100). It was found that hydrogenation results in an increase of 120 meV in the barrier height to n-type Si(100). Measurements of the hydrogen concentration in the interface, using quantitative ion beam analysis, were used to establish the correlation between the change in barrier height and hydrogen concentration; other hydrogen effects such as passivation of shallow donors and acceptor impurities in silicon were ruled out. The results demonstrate that 8×1015 H-atoms/cm2 can alter an interface layer and thereby change the pinning position of the Fermi level.