A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
It has been known that silicon atoms can diffuse out through a gold film and accumulate on the top surface at low temperatures. To investigate the effect of this phenomenon on the silicide formation kinetics, a gold layer was deposited between a platinum layer and a silicon layer. After annealing, the progress of silicide formation was probed with Rutherford backscattering spectrometry. It was found that the PtSi formation rate is greatly enhanced by a gold film while the Pt2Si formation rate shows little changes. These are explained in terms of different dominant diffusing species during the formation of silicides. © 1987, American Vacuum Society. All rights reserved.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Peter J. Price
Surface Science
John G. Long, Peter C. Searson, et al.
JES
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997