Jian Li, S.Q. Wang, et al.
Physical Review B
Solid phase epitaxy and metastable solubility limits of implanted Sb atoms have been investigated in stressed and stress-relaxed Ge0.1Si 0.9 thin films. For a 5×1015 cm-2 Sb implantation, complete recrystallization is achieved for both samples after a 60 min furnace annealing at 600°C. In the case of stress-relaxed alloy, 91% of the Sb atoms are located at the substitutional sites of the Ge-Si matrix. For the stressed sample, however, only 60% of the Sb atoms occupy the substitutional sites of the matrix. A defect-free regrown layer is observed for the relaxed sample, while twins are formed near the location of the Sb concentration peak in the stressed Ge-Si. The maximum solid solubilities of Sb are estimated to be 1.6×1021 and 8×1020 cm-3 for the relaxed and the stressed Ge0.1Si0.9, respectively.
Jian Li, S.Q. Wang, et al.
Physical Review B
S.S. Lau, W.K. Chu, et al.
Thin Solid Films
L. Clevenger, B. Arcot, et al.
MRS Spring Meeting 1996
L. Clevenger, Q.Z. Hong, et al.
MRS Proceedings 1993