Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
MISFET-type structures have been developed that allow the application of electric fields larger than 4 × 106 V/cm into 100 Å thick, superconducting YBa2Cu3O7-δ channel layers. With these structures, t he carrier density and the electrical resistivity of YBa2Cu3O7-δ can be modified in the percent range by gate voltages of 50 V. © 1991.
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials