A. Gangulee, F.M. D'Heurle
Thin Solid Films
MISFET-type structures have been developed that allow the application of electric fields larger than 4 × 106 V/cm into 100 Å thick, superconducting YBa2Cu3O7-δ channel layers. With these structures, t he carrier density and the electrical resistivity of YBa2Cu3O7-δ can be modified in the percent range by gate voltages of 50 V. © 1991.
A. Gangulee, F.M. D'Heurle
Thin Solid Films
P.C. Pattnaik, D.M. Newns
Physical Review B
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings