Lawrence Suchow, Norman R. Stemple
JES
MISFET-type structures have been developed that allow the application of electric fields larger than 4 × 106 V/cm into 100 Å thick, superconducting YBa2Cu3O7-δ channel layers. With these structures, t he carrier density and the electrical resistivity of YBa2Cu3O7-δ can be modified in the percent range by gate voltages of 50 V. © 1991.
Lawrence Suchow, Norman R. Stemple
JES
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Ronald Troutman
Synthetic Metals