Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
MISFET-type structures have been developed that allow the application of electric fields larger than 4 × 106 V/cm into 100 Å thick, superconducting YBa2Cu3O7-δ channel layers. With these structures, t he carrier density and the electrical resistivity of YBa2Cu3O7-δ can be modified in the percent range by gate voltages of 50 V. © 1991.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Imran Nasim, Melanie Weber
SCML 2024