J. Knoch, J. Appenzeller, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
The fabrication of electronic devices based on single-walled nitride nanotubes (BNNT) was discussed. The gate-induced barrier modulation was observed in vertically scaled devices, resulting in field-effect transistor operation. The devices showed an exponentially increasing current (Id) with the applied voltage bias (Vds) up to 35 V at room temperature.
J. Knoch, J. Appenzeller, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J. Appenzeller, R. Martel, et al.
Applied Physics Letters
J. Knoch, W. Riess, et al.
IEEE Electron Device Letters
K.M. Indlekofer, J. Knoch, et al.
Physical Review B - CMMP