H. Stahl, J. Appenzeller, et al.
Materials Science and Engineering C
The fabrication of electronic devices based on single-walled nitride nanotubes (BNNT) was discussed. The gate-induced barrier modulation was observed in vertically scaled devices, resulting in field-effect transistor operation. The devices showed an exponentially increasing current (Id) with the applied voltage bias (Vds) up to 35 V at room temperature.
H. Stahl, J. Appenzeller, et al.
Materials Science and Engineering C
S.J. Wind, J. Appenzeller, et al.
NANO 2003
H.-S. Wong, J. Appenzeller, et al.
ISSCC 2003
M. Radosavljević, M. Freitag, et al.
Nano Letters