Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
We report electrically excited infrared emission from a single InN nanowire transistor. We report on: (1) the generation of IR emission by impact excitation of carriers under a high electrical field, (2) the size of the fundamental band gap of InN NW by measuring its emission spectra, (3) the observation of interband and conduction-band to conduction-band hot-carrier emission, and the carrier relaxation rate, and finally, (4) we present evidence that suggests that the electron accumulation layer at the InN NW surface forms a surface plasmon that couples to and enhances radiative electron-hole pair recombination. © 2007 American Chemical Society.
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
David B. Mitzi
Journal of Materials Chemistry
Ronald Troutman
Synthetic Metals
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting