John G. Long, Peter C. Searson, et al.
JES
Electron-energy-loss spectra recorded from very small volumes of diamond containing individual dislocations show extra intensity within the band gap just below the 1sto conduction-band threshold energy, when compared to spectra recorded from neighboring defect-free regions. This is interpreted as direct evidence for the presence of vacant defect states associated with the dislocation structure. The contribution of the * states from the surface layers to this region of the spectra is completely removed by calculating the difference between the spectra recorded on and off the defect. © 1989 The American Physical Society.
John G. Long, Peter C. Searson, et al.
JES
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
David B. Mitzi
Journal of Materials Chemistry