Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Electron-energy-loss spectra recorded from very small volumes of diamond containing individual dislocations show extra intensity within the band gap just below the 1sto conduction-band threshold energy, when compared to spectra recorded from neighboring defect-free regions. This is interpreted as direct evidence for the presence of vacant defect states associated with the dislocation structure. The contribution of the * states from the surface layers to this region of the spectra is completely removed by calculating the difference between the spectra recorded on and off the defect. © 1989 The American Physical Society.
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993