Peter E. Blöchl, C.G. Van De Walle, et al.
Physical Review Letters
We predict a new effect, electron-hole exchange transitions, which occur at all amphoteric defects. We show that these transitions play a dominant role in electron-hole recombination at deep centers. In particular our results demonstrate that recent conflicting data on gold-doped silicon are all consistent with the observed donor and acceptor levels belonging to the same center. © 1985 The American Physical Society.
Peter E. Blöchl, C.G. Van De Walle, et al.
Physical Review Letters
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Ronald Troutman
Synthetic Metals