R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
The EPR of the group IV donor Ge in GaP behaves differently from that of the other group IV donors Si and Sn. The spectrum is observable without the application of a uniaxial stress and the g-value (g = 2.000 ± 0.003) and linewidth are independent of the magnitude and the direction of stress. Possible explanations of this anomaly are discussed. © 1972.
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Robert W. Keyes
Physical Review B
T.N. Morgan
Semiconductor Science and Technology
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS