R. Ghez, M.B. Small
JES
The properties of poly-(methyl methacrylate), a new electron resist developed at IBM Research, are presented in comparison to commercial photoresists under electron beam exposure. It is shown that methacrylate resist, with suitable processing, presents a means for submicron device fabrication with reasonable speed. Transistors with one- and half-micron emitter stripe widths have been fabricated using this resist as a medium for diffusion masking with SiO2. Also, a method for producing high-resolution, defect-free masks through methacrylate resist is presented. © 1969, The Electrochemical Society, Inc. All rights reserved.
R. Ghez, M.B. Small
JES
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
R.W. Gammon, E. Courtens, et al.
Physical Review B