L.L. Chang, E. Mendez, et al.
ICPS Physics of Semiconductors 1984
The process of electron tunneling from a metal to a semiconductor through an insulating layer is considered. Theoretical current-voltage expressions have been obtained, in particular, for the case when the semiconductor is degenerate p type and the conduction band of the insulator provides the dominant tunneling barrier. The existence of an energy gap and a relatively small Fermi energy in the semiconductor makes the current highly asymmetrical with respect to the polarity of the applied voltage. Experimentally, junctions of Al-Al 2O3-SnTe and -GeTe have been fabricated and their I-V characteristics measured at 4.2°K. Good agreement is observed between the theoretical and experimental current behavior, from which energy parameters of the semiconductors and the barrier relations of the junctions have been obtained. © 1967 The American Institute of Physics.
L.L. Chang, E. Mendez, et al.
ICPS Physics of Semiconductors 1984
J.C. Maan, Y. Guldner, et al.
Surface Science
L. Esaki
Journal of Crystal Growth
L.L. Chang, L. Esaki
Progress In Crystal Growth And Characterization