K.A. Chao
Physical Review B
The surface-state bands of the (1×1) and (1×2) phases of Bi/GaSb(110) have been probed using angle-resolved ultraviolet photoemission spectroscopy with synchrotron radiation. Four Bi-induced surface-state bands have been identified for both the (1×1) and the (1×2) phases. The bands with the lowest binding energies (SI and SII) have been attributed to intrachain bonding in the Bi overlayer and the higher-binding-energy bands (SIII and SIV) to overlayer states involved in the back bonding of the overlayer to the substrate. Based on initial-state dispersion measurements, we conclude that the Bi chains in the epitaxial overlayer remain intact throughout the phase transition. We propose a model for the overlayer structure of the (1×2) phase of Bi/GaSb(110). © 1993 The American Physical Society.
K.A. Chao
Physical Review B
T.N. Morgan
Semiconductor Science and Technology
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures