True 3-D displays for avionics and mission crewstations
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SPIE AeroSense 1997
Highly degenerate As-doped n-type and B-doped p-type Si(111)-(1×1) surfaces have been prepared via ion implantation and laser annealing and studied using photoemission. For as concentrations of 4-7 at.%, surface states become very different from those for intrinsic Si(111)-(1×1), and the Fermi level EF at the surface moves to the conduction-band minima. For this "flat-band" Si surface, the deposition of Au results in a zero-height n-type Schottky barrier. Also, emission from the conduction-band minima has been directly viewed in momentum space. © 1981 The American Physical Society.
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
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SPIE Advanced Lithography 2010
I. Morgenstern, K.A. Müller, et al.
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