Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
The electronic states of an InAs quantum well buried a few tens of nm below a GaSb surface are described, assuming Fermi-level pinning in the lower part of the gap at this surface. This model accounts satisfactorily for a variety of experimental observations such as the imbalance of electron and hole concentrations, the relatively high electron mobility, and the appearance of quantum-Hall plateaus. Additional cyclotron-resonance measurements are also consistent with the proposed electronic structure. © 1987 The American Physical Society.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
K.A. Chao
Physical Review B
P.C. Pattnaik, D.M. Newns
Physical Review B
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997