O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
The electronic states of an InAs quantum well buried a few tens of nm below a GaSb surface are described, assuming Fermi-level pinning in the lower part of the gap at this surface. This model accounts satisfactorily for a variety of experimental observations such as the imbalance of electron and hole concentrations, the relatively high electron mobility, and the appearance of quantum-Hall plateaus. Additional cyclotron-resonance measurements are also consistent with the proposed electronic structure. © 1987 The American Physical Society.
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
A. Gangulee, F.M. D'Heurle
Thin Solid Films