A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
A 3 × 3 surface reconstruction is obtained on Si(111) when B diffuses from the bulk to the surface in heavily doped Si samples. First-principles total-energy calculations show that the lowest-energy atomic configuration for this reconstruction consists of a B atom at a subsurface substitutional site, directly underneath a Si adatom. Surface electronic states observed by photoemission and inverse photoemission experiments are analyzed through electronic structure calculations and shown to be related to the back-bond and the dangling-bond states of the Si adatom. © 1990 The American Physical Society.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Michiel Sprik
Journal of Physics Condensed Matter
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta