Paper

01 Jan 1983

Electronic structure and geometry of group IV semiconductor surfaces

View publication

Abstract

Photoemission results for the electronic structure of group IV semiconductor surfaces (C, Si, Ge) are critically reviewed and implications on the surface geometry are discussed. Data are presented for surface states and for core level shifts of surface atoms. © 1983.

Related

Paper

Hydrogen-induced reconstruction of the W(100) surface, studied by surface core level spectroscopy

J.F. van der Veen, F.J. Himpsel, et al.

Solid State Communications

Paper

Si₂Cl₆and Si₂H₆adsorption on CaF₂/Si(111)

L.J. Terminello, F.J. Himpsel, et al.

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Paper

Site and nature of H bonding on Ti (0001)

Peter J. Feibelman, D.R. Hamann, et al.

Physical Review B

Paper

Quantum photoyield of diamond(111) A stable negative-affinity emitter

F.J. Himpsel, J.A. Knapp, et al.

Physical Review B

View all publications