J.Y. Tsao, E. Chason, et al.
Physical Review B
Scanning tunneling microscopy is used to determine the atomic structure, charge state, and electronic energy spectrum of isolated Si dangling-bond defects at the Al/Si(111) surface. Si adatoms substituting for Al in the first atomic layer give rise to a dangling-bond defect state near -0.4 eV which is strongly localized in space. Tunneling spectra and local band-bending measurements are inconsistent with simple one-electron band theory and demonstrate the importance of many-electron effects. © 1988 The American Physical Society.
J.Y. Tsao, E. Chason, et al.
Physical Review B
R.J. Hamers, Ph. Avouris, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.E. Demuth, D.W. Jepsen, et al.
Journal of Physics C: Solid State Physics
J.E. Demuth, R.J. Hamers, et al.
JVSTA