J.C. Tsang, Subramanian S. Iyer, et al.
Physical Review B
Presented is a method for growing crystalline diamond films by plasma enhanced chemical vapor deposition without the need for seeding with diamond particles. Instead, diamond nucleation and growth is "catalyzed" by a thin metal film which has been either abraded or deposited onto a SiC coated substrate. In the first experiment Fe, Cu, Ti, Nb, Mo, and Ni were abraded onto a SiC surface resulting in varying degrees of diamond nucleation and growth. In the second experiment, Fe films with thickness varying from 5 to 80 Å were evaporated onto the SiC. Although the 5 Å Fe film did not influence the initial nucleation and growth rate, greater thicknesses did. Preliminary studies of Fe on Si have not shown this effect.
J.C. Tsang, Subramanian S. Iyer, et al.
Physical Review B
J.C. Tsang
ECS Meeting 2002
J.C. Tsang, Ph. Avouris, et al.
The Journal of Chemical Physics
J.A. Kash, J.C. Tsang
IEDM 1996