J.F. Van Der Veen, F.J. Himpsel, et al.
Physical Review B
It is shown that LiF(100) films with the electronic properties of cleaved bulk LiF crystals can be grown epitaxially on Ge(100). These include an exceptionally large, negative electron affinity of -2.7 eV, which leads to intense photoemission at zero kinetic energy. The valence band offset ranges from 7.3-7.6 eV.
J.F. Van Der Veen, F.J. Himpsel, et al.
Physical Review B
D.E. Eastman, J.J. Donelon, et al.
Nuclear Instruments and Methods
T.A. Jung, Y.W. Mo, et al.
Physical Review Letters
C. Hwang, F.J. Himpsel
Physical Review B