A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
EPR of Rh2+ (4d7), Rh4+ (4d5), Os3+ (5d5), Os5+ (5d3) and Ir4+ (5d5) have been observed in doped-rutile crystals grown by vapor transport. All the nd5 ions are in their high-field, low-spin, states with orbital angular momentum-reduction factors between 0.85 and 0.36. The Os5+ (5d3) ground state is characterized by a large axial field splitting. Ir4+ is very stable in TiO2 and its optical absorption spectrum is reported. © 1986.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
P. Alnot, D.J. Auerbach, et al.
Surface Science
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007