G. Katsaros, M. Stoffel, et al.
Applied Physics Letters
We study surface and bulk equilibrium in Si-Ge alloys by direct simulation. The composition at a reconstructed (100) surface varies with depth in a complex oscillatory way. Lateral ordering occurs even in the fourth layer, driven by the local stress field. The bulk phase diagram is well described by regular solution theory. © 1989 The American Physical Society.
G. Katsaros, M. Stoffel, et al.
Applied Physics Letters
J. Tersoff, P.C. Kelires
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
François Léonard, J. Tersoff
Applied Physics Letters
J. Tersoff
Nano Letters