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Physica E: Low-Dimensional Systems and Nanostructures
The valence-band offset between GaAs and AlGaAs has been found to be independent of crystal orientation, as deduced from measurements of the two-dimensional hole densities in Al0.26Ga0.74As/GaAs heterojunctions. An analysis of the charge transfer yields a valence-band offset of 0.39±0.02 of the energy-gap difference. © 1985 The American Physical Society.
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
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Journal of Applied Mechanics, Transactions ASME
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Physica B: Physics of Condensed Matter