I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Extended X-ray absorption fine structure measurements were used to determine nearest neighbor coordination numbers and distances for As in amorphous Si prepared by 100 keV As ion-implantation of single crystal Si. In the limit of low As concentration, the average AsSi coordination number was 3.2±0.1 and the As-to-Si distance was 2.37±0.02 A ̊, compared with 4 and 2.41±0.02 A ̊, respectively, for As in crystalline Si. It is concluded that 20% of the As atoms are fourfold coordinated and 80% are threefold coordinated in the amorphous Si, and that the lack of electrical doping by the fourfold coordinated As results from electron trapping by dangling bonds or other structural defects. © 1992.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009