A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Band dispersions E(k) and critical points of V3Si have been determined by k-selective angle-resolved photoemission with synchrotron radiation. A V-3d band (Δ1,2) which is very close to EF at Γ (Γ12) has been observed which is very flat near Γ along the ΓX direction, in agreement with recent APW calculations. Critical points of valence bands as well as their orbital character and density of states features have been determined. © 1981.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
P.C. Pattnaik, D.M. Newns
Physical Review B