R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
CNFETs were fabricated in a top gate construction. The thin dielectric offered improved electrical performance relative to substrate-gated CNFETs with thicker gate dielectrics, at a fraction of the gate voltage. The top gate structure also offered individual switchability, as well as stable n-FET and p-FET devices, enabling the possibility of future CMOS CNFET circuits.
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
David B. Mitzi
Journal of Materials Chemistry
Kigook Song, Robert D. Miller, et al.
Macromolecules
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering