J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
CNFETs were fabricated in a top gate construction. The thin dielectric offered improved electrical performance relative to substrate-gated CNFETs with thicker gate dielectrics, at a fraction of the gate voltage. The top gate structure also offered individual switchability, as well as stable n-FET and p-FET devices, enabling the possibility of future CMOS CNFET circuits.
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011