J. Tersoff
Applied Surface Science
CNFETs were fabricated in a top gate construction. The thin dielectric offered improved electrical performance relative to substrate-gated CNFETs with thicker gate dielectrics, at a fraction of the gate voltage. The top gate structure also offered individual switchability, as well as stable n-FET and p-FET devices, enabling the possibility of future CMOS CNFET circuits.
J. Tersoff
Applied Surface Science
P.C. Pattnaik, D.M. Newns
Physical Review B
Sung Ho Kim, Oun-Ho Park, et al.
Small
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films