Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
A sub-micron trenching technique has been developed to fabricate Aharonov-Bohm ring structures in a high mobility Si/Si0.7Ge0.3 modulation doped heterostructure. Scanning electron-beam lithography is used to expose the area defining the ring contour, and reactive-ion etching follows to recess this area, thus forcing electrons to flow inside the ring. Conductance in the Si/SiGe rings exhibits oscillations in magnetoresistance, which is the first observation of this effect in Si-based materials. The amplitude of the oscillations is comparable to that of similar devices on similar mobility GaAs/GaAlAs heterostructures. © 1995 Elsevier Science B.V. All rights reserved.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Ming L. Yu
Physical Review B
Lawrence Suchow, Norman R. Stemple
JES