F.M. D'Heurle, J. Tersoff, et al.
Journal of Applied Physics
The growth kinetics of a crystal facet at low temperature and low stress are analyzed. It is shown that a planar strained layer can, in principle, be grown to arbitrary thickness by growing sufficiently slowly.
F.M. D'Heurle, J. Tersoff, et al.
Journal of Applied Physics
S. Kodambaka, J. Tersoff, et al.
Microscopy and Microanalysis
J. Tersoff
Physical Review B
Marcus Freitag, Jia Chen, et al.
Physical Review Letters