Robert W. Keyes
Physical Review B
Factors affecting the slope of the reactive ion etched molybdenum line have been studied with a simulation method and with experiments. Plasma chemistry and process parameters of the CF4/O2 mixture for the molybdenum etch have been examined. The theoretical calculation matches experimental results. Surface topography and composition of the etched molybdenum have been analyzed. A highly sloped molybdenum profile can be obtained by using the RIE method with a large process window. © 1990, The Electrochemical Society, Inc. All rights reserved.
Robert W. Keyes
Physical Review B
J.C. Marinace
JES
R. Ghez, M.B. Small
JES
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007