Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
Factors affecting the slope of the reactive ion etched molybdenum line have been studied with a simulation method and with experiments. Plasma chemistry and process parameters of the CF4/O2 mixture for the molybdenum etch have been examined. The theoretical calculation matches experimental results. Surface topography and composition of the etched molybdenum have been analyzed. A highly sloped molybdenum profile can be obtained by using the RIE method with a large process window. © 1990, The Electrochemical Society, Inc. All rights reserved.
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
J.A. Barker, D. Henderson, et al.
Molecular Physics
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering