A.G. Schrott, G. Singco, et al.
Applied Physics Letters
The fabrication and remnant polarization characteristics of a ferroelectric field effect transistor (FET) with a solid-solution channel layer of SrRuxTi1-xO3 were studied. The remnant polarization at 0 V produced a relative change in the channel resistance, alongwith the coercivity of 3 V. The charge balancing act provided by the channel's off-state carrier concentration was also discussed.
A.G. Schrott, G. Singco, et al.
Applied Physics Letters
A.G. Schrott, J. Misewich, et al.
MRS Proceedings 2002
J.H. Glownia, J. Misewich, et al.
The Journal of Chemical Physics
Chieh-Fang Chen, A.G. Schrott, et al.
IMW 2009