Conference paper
Mott transition field effect transistor: Experimental results
A.G. Schrott, J.A. Mishwich, et al.
Materials Research Society Symposium - Proceedings
Paper
Ferroelectric field-effect transistor with a SrRuxTi1-xO3 channel
Abstract
The fabrication and remnant polarization characteristics of a ferroelectric field effect transistor (FET) with a solid-solution channel layer of SrRuxTi1-xO3 were studied. The remnant polarization at 0 V produced a relative change in the channel resistance, alongwith the coercivity of 3 V. The charge balancing act provided by the channel's off-state carrier concentration was also discussed.