Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
The field-effect mobility, Hall coefficient, and conductivity as functions of the oxygen concentration and temperature are reported for YBa2Cu3O6 films on the insulating side of the insulator-to-metal transition. The temperature dependence of the conductivity and Hall coefficient indicate that for small the excess oxygen introduces acceptor states at about 30 meV above the valence-band edge. The field effect reveals a space-charge layer in which carriers are depleted at the air-YBa2Cu3O6 interface. The size of the field effect is limited by localized states at the interface. © 1992 The American Physical Society.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Mark W. Dowley
Solid State Communications