Fluorine-silicon reactions and the etching of crystalline silicon

Abstract

The interaction between F atoms and crystalline Si, which is essential for etching processes in semiconductor device fabrication, is investigated with state-of-the-art theoretical techniques. A comprehensive picture of F reactions with the Si surface, the bulk, and the near-surface region is obtained, in terms of which the etching process is elucidated. Insertion of F into Si-Si bonds becomes possible because of relaxed steric constraints in the near-surface region. Dependence of the etch rate on doping follows naturally, in agreement with observations. © 1988 The American Physical Society.