Joseph M. Jasinski
Journal of Physical Chemistry
Paper
Formation of gas-phase silyl radicals in the atomic hydrogen etching of silicon
Abstract
Mass spectrometric evidence is presented for the direct formation of gas-phase silyl radical, SiH3, as a product of the heterogeneous etching reaction of silicon films with hydrogen or deuterium atoms. © 1993.
Related
Bernard S. Meyerson, Joseph M. Jasinski
Journal of Applied Physics
Joseph M. Jasinski, Joan K. Frisoll, et al.
Journal of Physical Chemistry
Joseph M. Jasinski, Joan K. Frisoli, et al.
Faraday Discussions of the Chemical Society