Formation of gas-phase silyl radicals in the atomic hydrogen etching of silicon

Joseph M. Jasinski

doi:10.1016/0009-2614(93)80144-E

Chemical Physics Letters

Paper

27 Aug 1993

Formation of gas-phase silyl radicals in the atomic hydrogen etching of silicon

View publication

Abstract

Mass spectrometric evidence is presented for the direct formation of gas-phase silyl radical, SiH3, as a product of the heterogeneous etching reaction of silicon films with hydrogen or deuterium atoms. © 1993.

Paper

Fourth overtone spectra of OH oscillators in simple alcohols

Joseph M. Jasinski

Chemical Physics Letters

Paper

Silicon Chemical Vapor Deposition One Step at a Time: Fundamental Studies of Silicon Hydride Chemistry

Joseph M. Jasinski, Stephen M. Gates

Accounts of Chemical Research

Paper

Surface loss coefficients for the silyl radical

Joseph M. Jasinski

Journal of Physical Chemistry

Paper

Silane pyrolysis rates for the modeling of chemical vapor deposition

Bernard S. Meyerson, Joseph M. Jasinski

Journal of Applied Physics

View all publications

Abstract

Related

Fourth overtone spectra of OH oscillators in simple alcohols

Silicon Chemical Vapor Deposition One Step at a Time: Fundamental Studies of Silicon Hydride Chemistry

Surface loss coefficients for the silyl radical

Silane pyrolysis rates for the modeling of chemical vapor deposition