Formation of gas-phase silyl radicals in the atomic hydrogen etching of silicon

Joseph M. Jasinski

doi:10.1016/0009-2614(93)80144-E

Chemical Physics Letters

Paper

27 Aug 1993

Formation of gas-phase silyl radicals in the atomic hydrogen etching of silicon

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Abstract

Mass spectrometric evidence is presented for the direct formation of gas-phase silyl radical, SiH3, as a product of the heterogeneous etching reaction of silicon films with hydrogen or deuterium atoms. © 1993.

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Absolute rate constant for the reaction SiH₂ + D₂

Joseph M. Jasinski

Journal of Physical Chemistry

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Absolute rate constants for the reaction of silylene with hydrogen, silane, and disilane

Joseph M. Jasinski, Jack O. Chu

The Journal of Chemical Physics

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Mass spectrometric studies of remote helium plasma dissociation of silane

Joseph M. Jasinski

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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Fourth overtone spectra of OH oscillators in simple alcohols

Joseph M. Jasinski

Chemical Physics Letters

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Abstract

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Absolute rate constant for the reaction SiH2 + D2

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