Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Low temperature (mK) magneto-transport measurements of high quality n-type modulation-doped Si/Si0.7Ge0.3 heterostructures have been extended to high magnetic fields (50T) and low temperatures (40mK). For the high mobility electrons confined to 2D in the biaxially tensile strained Si layer, a two-valley system, signatures of the fractional quantum Hall effect (FQHE) in the Landau level filling factor region ν<1 (one valley occupied, lowest spin state) usually observed in GaAs are replicated out to ν= 2 5 at B ∼ 48T. For 1<ν<2 however, (both valleys occupied, lowest spin state), prominent FQHE states such as ν= 5 3 are absent, similar to the case in double layer GaAs systems. Tilted field experiments demonstrate that the valley splitting depends only on the normal field component. © 1995.
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials