E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
We report magnetotransport measurements, down to 0.050 K and up to 20 T, in two-dimensional systems with dilute and dense electron densities. The emphasis is on the latter regime, where the Hall resistance shows quantization for level filling factors at =43 and 53, and the magnetoresistance presents well-defined structures at =73 and 83. These results indicate that the fractional quantum Hall effect is a general phenomenon not restricted to the lowest-orbital Landau level. © 1984 The American Physical Society.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
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MRS Fall Meeting 2020
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