Conference paper
Dielectric isolated FinFETs on bulk substrate
Darsen Lu, Kangguo Cheng, et al.
S3S 2014
Fully depleted SOI (FDSOI) has become a viable technology not only for continued CMOS scaling to 22 nm node and beyond but also for improving the performances of legacy technology when retrofitting to old technology nodes. In this paper, we provide an overview of FDSOI technology, including the benefits and challenges in FDSOI design, manufacturing, and ecosystem. We articulate that FDSOI is potential cornerstone for China to catch up and leapfrog in semiconductor technology.
Darsen Lu, Kangguo Cheng, et al.
S3S 2014
Davood Shahrjerdi, Stephen W. Bedell, et al.
Solid-State Electronics
F. Allibert, Kangguo Cheng, et al.
S3S 2012
Kangguo Cheng, A. Khakifirooz, et al.
VLSI Technology 2011