A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
We describe the design and application of a low-energy electron microscope (LEEM) dedicated to the study of III-V materials. Recent studies of Langmuir (free) evaporation of GaAs(001) have been reviewed. Running Ga droplets are observed, and the motion is predicted and shown to slow and stop near a characteristic temperature. Striking bursts of "daughter" droplet nucleation accompany the coalescence of large "parent" droplets. These observations imply that evaporation and surface morphology are intimately connected, suggesting a new approach for the self-assembly and positioning of nanostructures on patterned surfaces. © 2011 by International Business Machines Corporation.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
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ASP-DAC 2008
John M. Boyer, Charles F. Wiecha
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