J.M. Hong, D.D. Awschalom, et al.
Journal of Crystal Growth
Paper
GaAs-GaAlAs graded-index separate confinement heterostructure laser diodes selectively grown by molecular beam epitaxy on SiO2-masked substrates
Abstract
The GaAs-GaAlAs graded-index separate confinement heterostructure was grown selectively by molecular beam epitaxy on a SiO2-masked GaAs (100) substrate. The stripe windows on the SiO2 mask were 10 μm in width and were oriented along [011̄] direction. The laser diodes thus fabricated lased in a single longitudinal mode with a side mode suppression ratio of 95. Both the longitudinal mode and the single-lobe far-field pattern were stable up to 4Ith.
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