J. Beerens, G. Grégoris, et al.
Physical Review B
Tunnel junctions are fabricated by evaporating GeTe on GaAs substrates. The current-voltage characteristics are similar to those in a Schottky barrier, except for the existence of a negative-resistance region. A simple model which predicts such behavior is analyzed to interpret the experimental results. © 1969 The American Institute of Physics.
J. Beerens, G. Grégoris, et al.
Physical Review B
Alex Harwit, M.B. Ritter, et al.
Applied Physics Letters
D.D. Awschalom, J. Warnock, et al.
Physical Review Letters
J.M. Calleja, F. Meseguer, et al.
Surface Science