Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers

Abstract

The magnetic sensitivities of the collector current in a three-terminal magnetic tunnel transistor device with spin-valve matellic base layers were investigated. It was observed that the giant magnetocurrents exceeding 3400% was produced from strong spin-dependent filtering of electrons traversing perpendicular to the spin-valve layers at energies above the Fermi energy. It was found that the output current of the device could be tuned into the microampere regime by increasing the bias voltage across the tunnel barrier.