Tim D. Bestwick, Gottlieb S. Oehrlein, et al.
Applied Physics Letters
Light emitted from a plasma during reactive ion etching and reflected by the wafer surface at a grazing angle is utilized to determine the remaining film thickness with an accuracy of ±30 Å. This promises a more flexible etching approach, e.g., tailoring the final stage of etching to minimize lattice damage.
Tim D. Bestwick, Gottlieb S. Oehrlein, et al.
Applied Physics Letters
James W. Corbett, Gottlieb S. Oehrlein, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Gottlieb S. Oehrlein, Holly L. Williams
Journal of Applied Physics
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Journal of Vacuum Science and Technology B