Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Journal of Vacuum Science and Technology B
Light emitted from a plasma during reactive ion etching and reflected by the wafer surface at a grazing angle is utilized to determine the remaining film thickness with an accuracy of ±30 Å. This promises a more flexible etching approach, e.g., tailoring the final stage of etching to minimize lattice damage.
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Journal of Vacuum Science and Technology B
Dominik Metzler, Florian Weilnboeck, et al.
JVSTB
Gottlieb S. Oehrlein, Arthur A. Bright, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Gottlieb S. Oehrlein
Materials Science and Engineering B