Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Spontaneous nanowire (NW) formation in the Ti/Si(111) system was followed and found to occur during reactive epitaxy at T∼850°C. Dynamic observations show that the rate-limiting kinetic step during both growth and shrinking of the NWs is the silicide reaction at the island ends.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals