P. Alnot, D.J. Auerbach, et al.
Surface Science
Spontaneous nanowire (NW) formation in the Ti/Si(111) system was followed and found to occur during reactive epitaxy at T∼850°C. Dynamic observations show that the rate-limiting kinetic step during both growth and shrinking of the NWs is the silicide reaction at the island ends.
P. Alnot, D.J. Auerbach, et al.
Surface Science
K.A. Chao
Physical Review B
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
T.N. Morgan
Semiconductor Science and Technology