S.A. Chambers, S. Thevuthasan, et al.
Applied Physics Letters
The growth of TaN was studied by plasma-enhanced-atomic layer deposition (PE-ALD) technique using TaCl5 and hydrogen and nitrogen plasmas. Good quality cubic-TaN films with resistivity as low as 350 μω cm were obtained at a low temperature of 300 °C. It was found that the growth rate and resistivity of the films increased with increasing N concentration.
S.A. Chambers, S. Thevuthasan, et al.
Applied Physics Letters
J.E.E. Baglin, C.T. Rettner, et al.
SPIE Optical Science and Technology 2001
H.Z. Guo, J. Burgess, et al.
Physical Review B - CMMP
S.M. Rossnagel, S.J. Whitehair, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films